全固态钙钛矿晶体管中的静电光致发光调控

摘要

我們展示了一種基於外延單晶金屬鹵化物鈣鈦礦的全固態半導體器件，可通過柵極電壓實現對鈣鈦礦光致發光的可逆調控。與電致發光二極管存在本質區別的是，這類光致發光場效應晶體管利用柵極電場靜電調控界面處可動載流子濃度，從而影響光生載流子的輻射與非輻射複合通道。通過改變柵壓可有效調控非輻射界面複合速率，使光致發光強度產生65%-98%的調製幅度（具體數值取決於溫度）。在最佳柵壓條件下，可實現非輻射複合損耗的近完全抑制。該功能特性結合外延鈣鈦礦薄膜的高吸收係數所實現的強可見光區吸收/發射能力、可控厚度及宏觀均勻形貌，使大面積薄膜器件實現了高外量子效率。這種高效、可擴展、靜電可調的光電開關器件，拓展了金屬鹵化物鈣鈦礦在光子學與光電子學領域的應用潛力。

English

We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from electroluminescent diodes, such a photoluminescence field effect transistor uses the gate electric field to electrostatically modulate the interfacial density of mobile charges, thereby affecting the radiative and nonradiative recombination channels of photocarriers. Varying the gate voltage in such transistors efficiently changes the rate of nonradiative interfacial recombination and modulates the photoluminescence intensity by 65 to 98 percent (depending on temperature). At favorable gating, nearly complete elimination of non-radiative losses can be achieved. This functionality, coupled with the strong visible-range absorption and emission, possible due to the high absorption coefficient, as well as controllable thickness and macroscopically homogeneous morphology of epitaxial perovskite films, leads to high external photoluminescence quantum efficiencies realized in large-area, thin-film devices. Such high-efficiency, scalable, electrostatically tunable optoelectronic switches broaden the potential applications of metal-halide perovskites in photonics and optoelectronics.

全固态钙钛矿晶体管中的静电光致发光调控

Electrostatic Photoluminescence Tuning in All-Solid-State Perovskite Transistors

摘要

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