全固态钙钛矿晶体管中的静电光致发光调控

摘要

我们展示了一种基于外延单晶金属卤化物钙钛矿的全固态半导体器件，该器件能够通过栅极电压实现对钙钛矿光致发光的可逆调控。与电致发光二极管存在本质区别的是，这种光致发光场效应晶体管利用栅极电场对界面处可移动电荷密度进行静电调制，从而影响光生载流子的辐射与非辐射复合通道。通过改变此类晶体管的栅极电压，可有效调节非辐射界面复合速率，使光致发光强度在65%至98%范围内变化（具体取决于温度）。在优化栅压条件下，几乎能完全消除非辐射损耗。这一功能特性结合外延钙钛矿薄膜的高吸收系数、可控厚度及宏观均匀形貌等优势，使其具备强可见光区吸收与发射能力，从而在大面积薄膜器件中实现了高外量子效率。此类高效、可扩展且支持静电调谐的光电开关器件，拓展了金属卤化物钙钛矿在光子学和光电子学领域的潜在应用前景。

English

We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from electroluminescent diodes, such a photoluminescence field effect transistor uses the gate electric field to electrostatically modulate the interfacial density of mobile charges, thereby affecting the radiative and nonradiative recombination channels of photocarriers. Varying the gate voltage in such transistors efficiently changes the rate of nonradiative interfacial recombination and modulates the photoluminescence intensity by 65 to 98 percent (depending on temperature). At favorable gating, nearly complete elimination of non-radiative losses can be achieved. This functionality, coupled with the strong visible-range absorption and emission, possible due to the high absorption coefficient, as well as controllable thickness and macroscopically homogeneous morphology of epitaxial perovskite films, leads to high external photoluminescence quantum efficiencies realized in large-area, thin-film devices. Such high-efficiency, scalable, electrostatically tunable optoelectronic switches broaden the potential applications of metal-halide perovskites in photonics and optoelectronics.

全固态钙钛矿晶体管中的静电光致发光调控

Electrostatic Photoluminescence Tuning in All-Solid-State Perovskite Transistors

摘要

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